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Processing Techniques for Dilute Nitride Gallium Arsenide Intermediate-Band Solar Cell Structures

Hallum, Goran Erik
Master thesis
Åpne
15416_FULLTEXT.pdf (Låst)
15416_COVER.pdf (Låst)
Permanent lenke
http://hdl.handle.net/11250/2615929
Utgivelsesdato
2016
Metadata
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Samlinger
  • Institutt for elektroniske systemer [1831]
Sammendrag
A solar cell processing procedure is calibrated for dilute nitride GaAs intermediate band solar cell

structures, and applied to a reference GaAs cell. The processing consists of front and backside

contact metalization, a mesa etch, an etch through a heavily doped contact region, a SiNx antire

ective coating deposition, and a contact opening etch. The backside contact requires an

anneal to become Ohmic. A poor turnout of the processed reference GaAs solar cell and time

constraints prohibited processing of actual intermediate band solar cells. The efficiency of the

reference cell was unacceptably low and major sources of loss are thought to be due to a high

series resistance as well as non-radiative recombination due to Al0.4Ga0.6As oxidation. Sources

of series resistance may arise from poor conduction properties of the window and emitter layer

of the reference cell, poor quality contacts, and residual SiNx on the contacts. Further measures

should be taken to eliminate these problems before processing actual structures.
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