dc.contributor.author | Ren, Dingding | |
dc.contributor.author | Ahtapodov, Lyubomir | |
dc.contributor.author | Nilsen, Julie Stene | |
dc.contributor.author | Yang, Jianfeng | |
dc.contributor.author | Gustafsson, Anders | |
dc.contributor.author | Huh, Junghwan | |
dc.contributor.author | Conibeer, G | |
dc.contributor.author | Van Helvoort, Antonius | |
dc.contributor.author | Fimland, Bjørn-Ove | |
dc.contributor.author | Weman, Helge | |
dc.date.accessioned | 2019-04-23T08:12:49Z | |
dc.date.available | 2019-04-23T08:12:49Z | |
dc.date.created | 2018-03-13T15:36:33Z | |
dc.date.issued | 2018 | |
dc.identifier.citation | Nano letters (Print). 2018, 18 2304-2310. | nb_NO |
dc.identifier.issn | 1530-6984 | |
dc.identifier.uri | http://hdl.handle.net/11250/2594972 | |
dc.description.abstract | Semiconductor nanowire lasers can produce guided coherent light emission with miniaturized geometry, bringing about new possibilities for a variety of applications including nanophotonic circuits, optical sensing, and on-chip and chip-to-chip optical communications. Here, we report on the realization of single-mode and room-temperature lasing from 890 nm to 990 nm utilizing a novel design of single nanowires with GaAsSb-based multiple axial superlattices as gain medium under optical pumping. The control of lasing wavelength via compositional tuning with excellent room-temperature lasing performance is shown to result from the unique nanowire structure with efficient gain material, which delivers a low lasing threshold of ~ 6 kW/cm2 (75 μJ/cm2 per pulse), a lasing quality factor as high as 1250 and a high characteristic temperature of ~ 129 K. These results present a major advancement for the design and synthesis of nanowire laser structures, which can pave the way towards future nanoscale integrated optoelectronic systems with superior performance. | nb_NO |
dc.language.iso | eng | nb_NO |
dc.publisher | American Chemical Society | nb_NO |
dc.title | Single-Mode Near-Infrared Lasing in a GaAsSb-Based Nanowire Superlattice at Room Temperature | nb_NO |
dc.type | Journal article | nb_NO |
dc.type | Peer reviewed | nb_NO |
dc.description.version | acceptedVersion | nb_NO |
dc.source.pagenumber | 2304-2310 | nb_NO |
dc.source.volume | 18 | nb_NO |
dc.source.journal | Nano letters (Print) | nb_NO |
dc.identifier.doi | 10.1021/acs.nanolett.7b05015 | |
dc.identifier.cristin | 1572596 | |
dc.relation.project | Norges forskningsråd: 245963 | nb_NO |
dc.relation.project | Norges forskningsråd: 239206 | nb_NO |
dc.relation.project | Norges forskningsråd: 197405 | nb_NO |
dc.description.localcode | © American Chemical Society 2018. This is the authors accepted and refereed manuscript to the article. Locked until 4.3.2019 due to copyright restrictions. | nb_NO |
cristin.unitcode | 194,63,35,0 | |
cristin.unitcode | 194,66,20,0 | |
cristin.unitname | Institutt for elektroniske systemer | |
cristin.unitname | Institutt for fysikk | |
cristin.ispublished | true | |
cristin.fulltext | postprint | |
cristin.qualitycode | 2 | |