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Single-Mode Near-Infrared Lasing in a GaAsSb-Based Nanowire Superlattice at Room Temperature

Ren, Dingding; Ahtapodov, Lyubomir; Nilsen, Julie Stene; Yang, Jianfeng; Gustafsson, Anders; Huh, Junghwan; Conibeer, G; Van Helvoort, Antonius; Fimland, Bjørn-Ove; Weman, Helge
Journal article, Peer reviewed
Accepted version
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http://hdl.handle.net/11250/2594972
Utgivelsesdato
2018
Metadata
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Originalversjon
Nano letters (Print). 2018, 18 2304-2310.   10.1021/acs.nanolett.7b05015
Sammendrag
Semiconductor nanowire lasers can produce guided coherent light emission with miniaturized geometry, bringing about new possibilities for a variety of applications including nanophotonic circuits, optical sensing, and on-chip and chip-to-chip optical communications. Here, we report on the realization of single-mode and room-temperature lasing from 890 nm to 990 nm utilizing a novel design of single nanowires with GaAsSb-based multiple axial superlattices as gain medium under optical pumping. The control of lasing wavelength via compositional tuning with excellent room-temperature lasing performance is shown to result from the unique nanowire structure with efficient gain material, which delivers a low lasing threshold of ~ 6 kW/cm2 (75 μJ/cm2 per pulse), a lasing quality factor as high as 1250 and a high characteristic temperature of ~ 129 K. These results present a major advancement for the design and synthesis of nanowire laser structures, which can pave the way towards future nanoscale integrated optoelectronic systems with superior performance.
Utgiver
American Chemical Society
Tidsskrift
Nano letters (Print)

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