The occupied electronic structure of ultrathin boron doped diamond
Pakpour-Tabrizi, Alex; Schenk, Alex Kevin; Holt, Ann Julie; mahatha, s.k.; Arnold, Fabian; Bianchi, Marco; Jackman, Richard; Butler, J.E.; Vikharev, A; Miwa, Jill A.; Hofmann, Philip; Cooil, Simon; Wells, Justin W; Mazzola, Federico
Peer reviewed, Journal article
Published version
Permanent lenke
https://hdl.handle.net/11250/2726772Utgivelsesdato
2020Metadata
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Sammendrag
Using angle-resolved photoelectron spectroscopy, we compare the electronic band structure of an ultrathin (1.8 nm) δ-layer of boron-doped diamond with a bulk-like boron doped diamond film (3 μm). Surprisingly, the measurements indicate that except for a small change in the effective mass, there is no significant difference between the electronic structure of these samples, irrespective of their physical dimensionality, except for a small modification of the effective mass. While this suggests that, at the current time, it is not possible to fabricate boron-doped diamond structures with quantum properties, it also means that nanoscale boron doped diamond structures can be fabricated which retain the classical electronic properties of bulk-doped diamond, without a need to consider the influence of quantum confinement.