dc.contributor.author | Pakpour-Tabrizi, Alex | |
dc.contributor.author | Schenk, Alex Kevin | |
dc.contributor.author | Holt, Ann Julie | |
dc.contributor.author | mahatha, s.k. | |
dc.contributor.author | Arnold, Fabian | |
dc.contributor.author | Bianchi, Marco | |
dc.contributor.author | Jackman, Richard | |
dc.contributor.author | Butler, J.E. | |
dc.contributor.author | Vikharev, A | |
dc.contributor.author | Miwa, Jill A. | |
dc.contributor.author | Hofmann, Philip | |
dc.contributor.author | Cooil, Simon | |
dc.contributor.author | Wells, Justin W | |
dc.contributor.author | Mazzola, Federico | |
dc.date.accessioned | 2021-02-09T08:56:36Z | |
dc.date.available | 2021-02-09T08:56:36Z | |
dc.date.created | 2020-12-16T15:41:30Z | |
dc.date.issued | 2020 | |
dc.identifier.citation | Nanoscale Advances. 2020, 2 (3), 1358-1364. | en_US |
dc.identifier.uri | https://hdl.handle.net/11250/2726772 | |
dc.description.abstract | Using angle-resolved photoelectron spectroscopy, we compare the electronic band structure of an ultrathin (1.8 nm) δ-layer of boron-doped diamond with a bulk-like boron doped diamond film (3 μm). Surprisingly, the measurements indicate that except for a small change in the effective mass, there is no significant difference between the electronic structure of these samples, irrespective of their physical dimensionality, except for a small modification of the effective mass. While this suggests that, at the current time, it is not possible to fabricate boron-doped diamond structures with quantum properties, it also means that nanoscale boron doped diamond structures can be fabricated which retain the classical electronic properties of bulk-doped diamond, without a need to consider the influence of quantum confinement. | en_US |
dc.language.iso | eng | en_US |
dc.publisher | Royal Society of Chemistry | en_US |
dc.relation.uri | https://pubs.rsc.org/en/content/articlehtml/2020/na/c9na00593e | |
dc.rights | Navngivelse-Ikkekommersiell 4.0 Internasjonal | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc/4.0/deed.no | * |
dc.title | The occupied electronic structure of ultrathin boron doped diamond | en_US |
dc.type | Peer reviewed | en_US |
dc.type | Journal article | en_US |
dc.description.version | publishedVersion | en_US |
dc.source.pagenumber | 1358-1364 | en_US |
dc.source.volume | 2 | en_US |
dc.source.journal | Nanoscale Advances | en_US |
dc.source.issue | 3 | en_US |
dc.identifier.doi | 10.1039/C9NA00593E | |
dc.identifier.doi | 10.1039/C9NA00593E | |
dc.identifier.cristin | 1860647 | |
dc.relation.project | Norges forskningsråd: 262633 | en_US |
dc.relation.project | Norges forskningsråd: 262339 | en_US |
dc.relation.project | Norges forskningsråd: 250985 | en_US |
dc.description.localcode | Open Access Article. Published on 24 February 2020.This article is licensed under a Creative Commons Attribution-NonCommercial 3.0 Unported Licence. | en_US |
cristin.ispublished | true | |
cristin.fulltext | preprint | |
cristin.qualitycode | 1 | |