dc.contributor.author | Ren, Dingding | |
dc.contributor.author | Ahtapodov, Lyubomir | |
dc.contributor.author | Van Helvoort, Antonius | |
dc.contributor.author | Weman, Helge | |
dc.contributor.author | Fimland, Bjørn-Ove | |
dc.date.accessioned | 2019-08-09T10:41:33Z | |
dc.date.available | 2019-08-09T10:41:33Z | |
dc.date.created | 2019-07-26T14:12:01Z | |
dc.date.issued | 2019 | |
dc.identifier.citation | Nanotechnology. 2019, 30 . | nb_NO |
dc.identifier.issn | 0957-4484 | |
dc.identifier.uri | http://hdl.handle.net/11250/2607753 | |
dc.description.abstract | Epitaxially grown ternary III-arsenide-antimonide (III-As–Sb) nanowires (NWs) are increasingly attracting attention due to their feasibility as a platform for the integration of largely lattice-mismatched antimonide-based heterostructures while preserving the high crystal quality. This and the inherent bandgap tuning flexibility of III-As–Sb in the near- and mid-infrared wavelength regions are important and auspicious premises for a variety of optoelectronic applications. In this review, we summarize the current understanding of the nucleation, morphology-change and crystal phase evolution of GaAsSb and InAsSb NWs and their characterization, especially in relation to Sb incorporation during growth. By linking these findings to the optical properties in such ternary NWs and their heterostructures, a brief account of the ongoing development of III-As–Sb NW-based photodetectors and light emitters is also given. | nb_NO |
dc.language.iso | eng | nb_NO |
dc.publisher | IOP Publishing | nb_NO |
dc.title | Epitaxially grown III-arsenide-antimonide nanowires for optoelectronic applications | nb_NO |
dc.type | Journal article | nb_NO |
dc.type | Peer reviewed | nb_NO |
dc.description.version | acceptedVersion | nb_NO |
dc.source.pagenumber | 17 | nb_NO |
dc.source.volume | 30 | nb_NO |
dc.source.journal | Nanotechnology | nb_NO |
dc.identifier.doi | https://doi.org/10.1088/1361-6528/ab13ed | |
dc.identifier.cristin | 1712904 | |
dc.relation.project | Norges forskningsråd: 197405 | nb_NO |
dc.description.localcode | Locked until 26.4.2020 due to copyright restrictions. This is an author-created, un-copyedited version of an article accepted for publication/published in [insert name of journal]. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://dx.doi.org/10.1088/1361-6528/ab13ed | nb_NO |
cristin.unitcode | 194,63,35,0 | |
cristin.unitcode | 194,66,20,0 | |
cristin.unitname | Institutt for elektroniske systemer | |
cristin.unitname | Institutt for fysikk | |
cristin.ispublished | true | |
cristin.fulltext | postprint | |
cristin.qualitycode | 2 | |