Single-Mode Near-Infrared Lasing in a GaAsSb-Based Nanowire Superlattice at Room Temperature
Ren, Dingding; Ahtapodov, Lyubomir; Nilsen, Julie Stene; Yang, Jianfeng; Gustafsson, Anders; Huh, Junghwan; Conibeer, G; Van Helvoort, Antonius; Fimland, Bjørn-Ove; Weman, Helge
Journal article, Peer reviewed
Accepted version
Åpne
Permanent lenke
http://hdl.handle.net/11250/2594972Utgivelsesdato
2018Metadata
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Sammendrag
Semiconductor nanowire lasers can produce guided coherent light emission with miniaturized geometry, bringing about new possibilities for a variety of applications including nanophotonic circuits, optical sensing, and on-chip and chip-to-chip optical communications. Here, we report on the realization of single-mode and room-temperature lasing from 890 nm to 990 nm utilizing a novel design of single nanowires with GaAsSb-based multiple axial superlattices as gain medium under optical pumping. The control of lasing wavelength via compositional tuning with excellent room-temperature lasing performance is shown to result from the unique nanowire structure with efficient gain material, which delivers a low lasing threshold of ~ 6 kW/cm2 (75 μJ/cm2 per pulse), a lasing quality factor as high as 1250 and a high characteristic temperature of ~ 129 K. These results present a major advancement for the design and synthesis of nanowire laser structures, which can pave the way towards future nanoscale integrated optoelectronic systems with superior performance.