dc.contributor.author | Liudi Mulyo, Andreas | |
dc.contributor.author | Konno, Yuta | |
dc.contributor.author | Nilsen, Julie Stene | |
dc.contributor.author | Van Helvoort, Antonius | |
dc.contributor.author | Fimland, Bjørn-Ove | |
dc.contributor.author | Weman, Helge | |
dc.contributor.author | Kishino, Katsumi | |
dc.date.accessioned | 2019-04-03T07:07:14Z | |
dc.date.available | 2019-04-03T07:07:14Z | |
dc.date.created | 2017-10-14T12:59:23Z | |
dc.date.issued | 2017 | |
dc.identifier.citation | Journal of Crystal Growth. 2017, 480 67-73. | nb_NO |
dc.identifier.issn | 0022-0248 | |
dc.identifier.uri | http://hdl.handle.net/11250/2593022 | |
dc.description.abstract | We demonstrate GaN nanocolumn growth on fused silica glass by plasma-assisted molecular beam epitaxy. The effect of the substrate temperature, Ga flux and N2 flow rate on the structural and optical properties are studied. At optimum growth conditions, GaN nanocolumns are vertically aligned and well separated with an average diameter, height and density of 72 nm, 1.2 μm and 1.6 × 109 cm−2, respectively. The nanocolumns exhibit wurtzite crystal structure with no threading dislocations, stacking faults or twinning and grow in the [0 0 0 1] direction. At the interface adjacent to the glass, there is a few atom layers thick intermediate phase with ABC stacking order (zinc blende). Photoluminescence measurements evidence intense and narrow excitonic emissions, along with the absence of any defect-related zinc blende and yellow luminescence emission. | nb_NO |
dc.description.abstract | Growth study of self-assembled GaN nanocolumns on silica glass by plasma assisted molecular beam epitaxy | nb_NO |
dc.language.iso | eng | nb_NO |
dc.publisher | Elsevier | nb_NO |
dc.title | Growth study of self-assembled GaN nanocolumns on silica glass by plasma assisted molecular beam epitaxy | nb_NO |
dc.type | Journal article | nb_NO |
dc.type | Peer reviewed | nb_NO |
dc.description.version | acceptedVersion | nb_NO |
dc.source.pagenumber | 67-73 | nb_NO |
dc.source.volume | 480 | nb_NO |
dc.source.journal | Journal of Crystal Growth | nb_NO |
dc.identifier.doi | 10.1016/j.jcrysgro.2017.10.009 | |
dc.identifier.cristin | 1504630 | |
dc.relation.project | Norges forskningsråd: 259553 | nb_NO |
dc.relation.project | NORTEM: 197405 | nb_NO |
dc.relation.project | Norges forskningsråd: 214235 | nb_NO |
dc.relation.project | Norges forskningsråd: 197411 | nb_NO |
dc.relation.project | Norges forskningsråd: 239206 | nb_NO |
dc.relation.project | Norges forskningsråd: 221860 | nb_NO |
dc.description.localcode | Publisher embargo until December 15 2019 (c) This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/ | nb_NO |
cristin.unitcode | 194,63,35,0 | |
cristin.unitcode | 194,66,20,0 | |
cristin.unitname | Institutt for elektroniske systemer | |
cristin.unitname | Institutt for fysikk | |
cristin.ispublished | true | |
cristin.fulltext | postprint | |
cristin.qualitycode | 1 | |