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dc.contributor.authorTiwari, Subhadra
dc.contributor.authorMidtgård, Ole-Morten
dc.contributor.authorUndeland, Tore Marvin
dc.date.accessioned2017-01-18T09:24:44Z
dc.date.available2017-01-18T09:24:44Z
dc.date.created2016-12-23T10:47:59Z
dc.date.issued2016
dc.identifier.citation42nd Annual Conference of the IEEE Industrial Electronics Society (IECON 2016) IEEE, Industrial Electronics, 1106-1111nb_NO
dc.identifier.isbn978-1-5090-3474-1
dc.identifier.urihttp://hdl.handle.net/11250/2427606
dc.description.abstractIn this paper, the switching performances of two state-of-the-art half-bridge SiC MOSFET modules are evaluated using a standard double pulse test methodology. The selected modules are commercially available, and have the same voltage and current ratings. A comparative study is carried out under various conditions such as similar dv/dt, di/dt, and current and voltage overshoots. Additionally, the lab setup is simulated in LTspice in order to investigate the impact of stray inductances in the switching performances. Both the simulations and the experimental measurements give insight in the significance of low inductive layouts to utilize the fast switching feature of SiC.nb_NO
dc.language.isoengnb_NO
dc.publisherIEEEnb_NO
dc.relation.ispartof42nd Annual Conference of the IEEE Industrial Electronics Society (IECON2016)
dc.titleExperimental performance evaluation of two commercially available, 1.2 kV half-bridge SiC MOSFET modulesnb_NO
dc.typeChapternb_NO
dc.typePeer reviewednb_NO
dc.source.pagenumber1106-1111nb_NO
dc.identifier.doi10.1109/IECON.2016.7793535
dc.identifier.cristin1417099
dc.description.localcode© 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. This is the authors' accepted and refereed manuscript to the article.nb_NO
cristin.unitcode194,63,20,0
cristin.unitnameInstitutt for elkraftteknikk
cristin.ispublishedfalse
cristin.fulltextpostprint
cristin.qualitycode1


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