Experimental performance evaluation of two commercially available, 1.2 kV half-bridge SiC MOSFET modules
Chapter, Peer reviewed
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Original version42nd Annual Conference of the IEEE Industrial Electronics Society (IECON 2016) IEEE, Industrial Electronics, 1106-1111 10.1109/IECON.2016.7793535
In this paper, the switching performances of two state-of-the-art half-bridge SiC MOSFET modules are evaluated using a standard double pulse test methodology. The selected modules are commercially available, and have the same voltage and current ratings. A comparative study is carried out under various conditions such as similar dv/dt, di/dt, and current and voltage overshoots. Additionally, the lab setup is simulated in LTspice in order to investigate the impact of stray inductances in the switching performances. Both the simulations and the experimental measurements give insight in the significance of low inductive layouts to utilize the fast switching feature of SiC.