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Patterning of Hard Mask on (111)-Oriented BTO/LSMO Heterostructures on STO Substrates

Digernes, Einar Standal
Master thesis
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URI
http://hdl.handle.net/11250/2421688
Date
2016
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Abstract
Functional oxides exhibit properties that make them interesting for future

electronic devices. Thin films of functional oxides can be routinely produced, but

there lacks a standard technique for establishing nanoscale freestanding structures

on insulating substrates. The nanostructures must be well defined and maintain

bulk properties.

In this work a recipe for establishing a two layer hard mask suitable for ion beam

etching (IBE) has been developed. A chromium hard mask is patterned and

deposited using electron beam lithography (EBL) and lift off. The pattern is

transferred to an underlying carbon layer by oxygen reactive ion etching (RIE).

Hard masks with hallbar patterns have been structured on 5 × 5 mm samples

with thin films of La0.7Sr0.3MnO3 (LSMO) and BaTiO3 (BTO) on (111)-oriented

SrTiO3 (STO) substrates. The hallbars have widths from 11 µm and down to

130 nm, which are connected to 200 × 200 µm contacts pads.

A bilayer mask of PMMA and MMA with a total thickness of 240 nm is found to

work successfully for lifting off 20 nm of chromium. Samples are prone to charging

during electron beam lithography. Fine features are written using 100 pA beam

current, while large features are defined at 10 nA.

The hard mask patterned samples are prepared for IBE, which will transfer the

hard mask pattern into the oxide thin film and substrate, realizing freestanding

oxide structures. Followed by deposition of contacts and wirebonding, the devices

can be used to investigate electrical transport properties.
Publisher
NTNU

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