Blar i Institutt for teknisk kybernetikk på emneord "High power discrete device, Power semiconductor device, IGBT, IGCT, Design"
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Meta-parameterisation of power semiconductor devices for studies of efficiency and power density in high power converters
(Chapter, 2016)This paper presents a meta-parameterised approach for evaluation of power switch modules (PSMs) in high power converters (HPCs). General models and parameters for evaluation of power losses and volume of PSMs are presented. ...