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Meta-parameterisation of power semiconductor devices for studies of efficiency and power density in high power converters

Barrera Cardenas, Rene Alexander; Isobe, Takanori; Molinas Cabrera, Maria Marta
Chapter, Conference object, Peer reviewed
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EPE2016_HPSD+%28003%29.pdf (2.374Mb)
URI
http://hdl.handle.net/11250/2445374
Date
2016
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  • Institutt for teknisk kybernetikk [2238]
  • Publikasjoner fra CRIStin - NTNU [20804]
Original version
Meta-parameterisation of power semiconductor devices for studies of efficiency and power density in high power converters. I: Power Electronics and Applications (EPE'16 ECCE Europe), 2016 18th European Conference. IEEE conference proceedings 2016   10.1109/EPE.2016.7695625
Abstract
This paper presents a meta-parameterised approach for evaluation of power switch modules (PSMs) in high power converters (HPCs). General models and parameters for evaluation of power losses and volume of PSMs are presented. Then, meta-parameterisation is performed for the High Power Semiconductor Devices (HPSDs) that are commonly used in HPCs, considering two types of package, press-pack and module type, and including IGBT, IGCT and IEGT chip technologies. A comparative analysis based on current capability and its dependency with the frequency in voltage source converters is introduced for the considered HPSD technologies. Press-pack IGBT technology shows the higher current capability and power dissipation performance, so it can be good choice for increase the operative frequency in HPCs.
Publisher
IEEE

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