Blar i Institutt for elektroniske systemer på tidsskrift "Journal of Crystal Growth"

Viser treff 1-3 av 3

    • Critical thickness of MBE-grown Ga1-xInxSb (x < 0.2) on GaSb 

      Nilsen, Tron Arne; Breivik, Magnus; Selvig, Espen; Fimland, Bjørn-Ove (Journal article; Peer reviewed, 2009)
      Several Ga1−xInxSb layers, capped with 1 μm of GaSb, were grown on GaSb(0 0 1) substrates by molecular beam epitaxy in a Varian Gen II Modular system using either the conventional sample growth position with substrate ...

    • Dopant incorporation in Al0.9Ga0.1As0.06Sb0.94 grown by molecular beam epitaxy 

      Patra, Saroj Kumar; Tran, Thanh-Nam; Vines, Lasse; Kolevatov, Ilia; Monakhov, Edouard; Fimland, Bjørn-Ove (Journal article, 2017)
      Incorporation of beryllium (Be) and tellurium (Te) dopants in epitaxially grown Al0.9Ga0.1As0.06Sb0.94 layers was investigated. Carrier concentrations and mobilities of the doped layers were obtained from room temperature ...

    • Growth study of self-assembled GaN nanocolumns on silica glass by plasma assisted molecular beam epitaxy 

      Liudi Mulyo, Andreas; Konno, Yuta; Nilsen, Julie Stene; Van Helvoort, Antonius; Fimland, Bjørn-Ove; Weman, Helge; Kishino, Katsumi (Journal article; Peer reviewed, 2017)
      We demonstrate GaN nanocolumn growth on fused silica glass by plasma-assisted molecular beam epitaxy. The effect of the substrate temperature, Ga flux and N2 flow rate on the structural and optical properties are studied. ...