Blar i Institutt for elektroniske systemer på tidsskrift "Journal of Applied Physics"
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Determination of GaAs zinc blende/wurtzite band offsets utilizing GaAs nanowires with an axial GaAsSb insert
(Journal article; Peer reviewed, 2017)By applying a correlated micro-photoluminescence spectroscopy and transmission electron microscopy (TEM) approach, we have utilized molecular beam epitaxy grown self-catalysed GaAs nanowires (NWs) with an axial GaAsSb ... -
Electrochemically driven degradation of chemical solution deposited ferroelectric thin-films in humid ambient
(Peer reviewed; Journal article, 2020)The ambient humidity significantly accelerates the degradation of lead zirconate titanate (PZT) films in microelectromechanical systems; the cause of such degradation is under debate. Here, it is shown that the degradation ... -
Octahedral coupling in (111)- and (001)-oriented La0.7Sr0.3MnO3/SrTiO3 heterostructures
(Journal article; Peer reviewed, 2018)Rotations and distortions of oxygen octahedra in perovskites play a key role in determining their functional properties. Here, we investigate how octahedral rotations can couple from one material to another in La2/3Sr1/3 ...