Blar i Institutt for elektroniske systemer på tidsskrift "IEEE Transactions on Electron Devices"
Viser treff 1-1 av 1
-
ASM GaN: Industry Standard Model for GaN RF and Power Devices – Part 1: DC, CV, and RF Model
(Peer reviewed; Journal article, 2019)We present the latest developments in Advance SPICE Model for GaN (ASM GaN) HEMTs in this paper. The ASM GaN model has been recently selected as an industry-standard compact model for GaN radio frequency (RF)and Power ...