• Detecting minute amounts of nitrogen in GaNAs thin films using STEM and CBED 

      Vatanparast, Maryam; Shao, Yu-Tsun; Rajpalke, Mohana; Fimland, Bjørn-Ove; Reenaas, Turid Dory; Holmestad, Randi; Vullum, Per Erik; Zuo, Jian Min (Journal article; Peer reviewed, 2021)
      Nitrogen (N) is a common element added to GaAs for band gap engineering and strain compensation. However, detection of small amounts of N is difficult for electron microscopy as well as for other chemical analysis techniques. ...
    • Quantitative strain analysis of InAs/GaAs quantum dot materials 

      Vullum, Per Erik; Nord, Magnus Kristofer; Vatanparast, Maryam; Thomassen, Sedsel Fretheim; Boothroyd, Chris; Holmestad, Randi; Fimland, Bjørn-Ove; Reenaas, Turid Worren (Journal article; Peer reviewed, 2017)
      Geometric phase analysis has been applied to high resolution aberration corrected (scanning) transmission electron microscopy images of InAs/GaAs quantum dot (QD) materials. We show quantitatively how the lattice mismatch ...