Blar i Institutt for elektroniske systemer på forfatter "Patra, Saroj Kumar"
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Aluminum-based contacts for use in GaSb-based diode lasers
Tran, Thanh-Nam; Patra, Saroj Kumar; Breivik, Magnus; Fimland, Bjørn-Ove (Journal article; Peer reviewed, 2016)Aluminum-based contacts could be a good alternative to conventional gold-based contacts for a number of GaSb-based devices. In this study, the use of some Al-based contacts in GaSb-based diode lasers was investigated via ... -
Dopant incorporation in Al0.9Ga0.1As0.06Sb0.94 grown by molecular beam epitaxy
Patra, Saroj Kumar; Tran, Thanh-Nam; Vines, Lasse; Kolevatov, Ilia; Monakhov, Edouard; Fimland, Bjørn-Ove (Journal article, 2017)Incorporation of beryllium (Be) and tellurium (Te) dopants in epitaxially grown Al0.9Ga0.1As0.06Sb0.94 layers was investigated. Carrier concentrations and mobilities of the doped layers were obtained from room temperature ... -
Plasma-assisted oxide removal from p-type GaSb for low resistivity ohmic contacts
Tran, Thanh-Nam; Patra, Saroj Kumar; Breivik, Magnus; Fimland, Bjørn-Ove (Journal article, 2015)The effect of several plasma-assisted oxide removal techniques prior to metallization of p-type GaSb was investigated. Compared to conventional chemical methods, the plasma-assisted oxide removal resulted in significant ...