Browsing Institutt for elektroniske systemer by Author "Gao, W.P."
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In-plane quasi-single-domain BaTiO3 via interfacial symmetry engineering
Lee, J.W.; Eom, K.; Paudel, T.R.; Wang, B.; Lu, H.; Huyan, H.X.; Lindemann, S.; Ryu, S.; Lee, H.; Kim, T.H.; Yuan, Y.; Zorn, J.A.; Lei, S.; Gao, W.P.; Tybell, Per Thomas Martin; Gopalan, V.; Pan, Xiaoqing; Gruverman, A.; Chen, L.Q.; Tsymbal, Evgeny Yu.; Eom, CB (Peer reviewed; Journal article, 2021)The control of the in-plane domain evolution in ferroelectric thin films is not only critical to understanding ferroelectric phenomena but also to enabling functional device fabrication. However, in-plane polarized ...