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dc.contributor.advisorPeftisis, Dimsthenis
dc.contributor.advisorTedeschi, Elisabetta
dc.contributor.authorRødal, Gard Lyng
dc.date.accessioned2024-05-31T05:58:45Z
dc.date.available2024-05-31T05:58:45Z
dc.date.issued2024
dc.identifier.isbn978-82-326-8013-9
dc.identifier.issn2703-8084
dc.identifier.urihttps://hdl.handle.net/11250/3132043
dc.language.isoengen_US
dc.publisherNTNUen_US
dc.relation.ispartofseriesDoctoral theses at NTNU;2024:211
dc.relation.haspartRødal, Gard Lyng; Peftitsis, Dimosthenis. An Adaptive Current-Source Gate Driver for High-Voltage SiC mosfets. IEEE transactions on power electronics 2023 ;Volum 38.(2) s. 1732-1746 https://doi.org/10.1109/TPEL.2022.3208827en_US
dc.relation.haspartRødal, Gard Lyng; Peftitsis, Dimosthenis. Real-Time FPGA Simulation of High-Voltage Silicon Carbide MOSFETs. IEEE transactions on power electronics 2023 ;Volum 38.(3) s. 3213-3234 https://doi.org/10.1109/TPEL.2022.3223951en_US
dc.relation.haspartRødal, Gard Lyng; Vivekanandham Pushpalatha, Yoganandam; Philipps, Daniel Alexander; Peftitsis, Dimosthenis. Capacitance Variations and Gate Voltage Hysteresis Effects on the Turn-On Switching Transients Modelling of High-Voltage SiC MOSFETs. IEEE transactions on power electronics 2023 ;Volum 38.(5) s. 6128-6142 https://doi.org/10.1109/TPEL.2023.3243951en_US
dc.relation.haspartRødal, Gard Lyng; Peftitsis, Dimosthenis. Gate-Drive Circuits for Adaptive Operation of SiC MOSFETs. IEEE transactions on power electronics 2024, Volume: 39, Issue: 7 https://doi.org/10.1109/TPEL.2024.3382335en_US
dc.relation.haspartRødal, Gard Lyng; Peftitsis, Dimosthenis. Real-Time FPGA Simulation of Silicon Carbide MOSFETs. IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)en_US
dc.titleReal-time Simulation and Adaptive Gate Driving of SiC MOSFETsen_US
dc.typeDoctoral thesisen_US
dc.subject.nsiVDP::Technology: 500::Electrotechnical disciplines: 540en_US


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