Real-time Simulation and Adaptive Gate Driving of SiC MOSFETs
Doctoral thesis
Date
2024Metadata
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- Institutt for elkraftteknikk [2644]
Has parts
Rødal, Gard Lyng; Peftitsis, Dimosthenis. An Adaptive Current-Source Gate Driver for High-Voltage SiC mosfets. IEEE transactions on power electronics 2023 ;Volum 38.(2) s. 1732-1746 https://doi.org/10.1109/TPEL.2022.3208827Rødal, Gard Lyng; Peftitsis, Dimosthenis. Real-Time FPGA Simulation of High-Voltage Silicon Carbide MOSFETs. IEEE transactions on power electronics 2023 ;Volum 38.(3) s. 3213-3234 https://doi.org/10.1109/TPEL.2022.3223951
Rødal, Gard Lyng; Vivekanandham Pushpalatha, Yoganandam; Philipps, Daniel Alexander; Peftitsis, Dimosthenis. Capacitance Variations and Gate Voltage Hysteresis Effects on the Turn-On Switching Transients Modelling of High-Voltage SiC MOSFETs. IEEE transactions on power electronics 2023 ;Volum 38.(5) s. 6128-6142 https://doi.org/10.1109/TPEL.2023.3243951
Rødal, Gard Lyng; Peftitsis, Dimosthenis. Gate-Drive Circuits for Adaptive Operation of SiC MOSFETs. IEEE transactions on power electronics 2024, Volume: 39, Issue: 7 https://doi.org/10.1109/TPEL.2024.3382335
Rødal, Gard Lyng; Peftitsis, Dimosthenis. Real-Time FPGA Simulation of Silicon Carbide MOSFETs. IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)