An Adaptive Current-Source Gate Driver for High-Voltage SiC MOSFETs
Peer reviewed, Journal article
Accepted version
Permanent lenke
https://hdl.handle.net/11250/3045346Utgivelsesdato
2022Metadata
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- Institutt for elkraftteknikk [2412]
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Originalversjon
https://doi.org/10.1109/TPEL.2022.3208827Sammendrag
This paper presents a novel current-source gate driver for Silicon Carbide (SiC) metal oxide semiconductor field-effect transistors (MOSFETs) with adaptive functionalities. The proposed driver aims to decouple and improve controllability of di/dt, dv/dt , as well as to decrease turn-on and turn-off delay times compared to conventional totem-pole voltage-source gate drivers and conventional current-source gate drivers. The circuit topology of the proposed gate driver and the working principle are analysed for the turn-on and turn-off processes. Furthermore, the driving requirements in terms of gate voltage and gate current for SiC MOSFETs that determine the design and tuning of gate drivers are presented. The performance of the proposed gate driver is validated experimentally on a 3.3 kV/750 A SiC MOSFET half-bridge power module. It is shown that, compared to conventional voltage-source gate drivers, the driver is capable of significantly reducing turn-on and turn-off delay times by approximately 57% and 33%, respectively. Moreover, the proposed gate driver enables 233% controllability of di/dt and 87% of dv/dt .