dc.contributor.author | Haugen, Krister Leonart | |
dc.contributor.author | Papastergiou, Konstantinos | |
dc.contributor.author | Asimakopoulos, Panagiotis | |
dc.contributor.author | Peftitsis, Dimosthenis | |
dc.date.accessioned | 2022-12-29T15:59:23Z | |
dc.date.available | 2022-12-29T15:59:23Z | |
dc.date.created | 2022-01-14T15:10:31Z | |
dc.date.issued | 2022 | |
dc.identifier.issn | 1748-0221 | |
dc.identifier.uri | https://hdl.handle.net/11250/3039964 | |
dc.description.abstract | The lower conduction power losses and the positive temperature coefficient that favours parallel connections, make Silicon Carbide (SiC) metal oxide semiconductor field-effect transistors (MOSFETs) to be an excellent replacement of existing Silicon insulated gate bipolar transistors (IGBTs) technology. These characteristics combined with high switching frequency operation, enables the design of high-accuracy DC-DC converters with minimised filtering requirements. This paper investigates the design for a converter with high-accuracy current (0.9ppm) supplying a 0.05H electromagnetic load, aiming to achieve the accuracy without the use of active filters, by using SiC MOSFETs and a scalable module-based converter design. | en_US |
dc.language.iso | eng | en_US |
dc.publisher | IOP Publishing | en_US |
dc.title | High precision scalable power converter for accelerator magnets | en_US |
dc.type | Peer reviewed | en_US |
dc.type | Journal article | en_US |
dc.description.version | acceptedVersion | en_US |
dc.source.journal | Journal of Instrumentation (JINST) | en_US |
dc.identifier.doi | 10.1088/1748-0221/17/03/C03021 | |
dc.identifier.cristin | 1981413 | |
cristin.ispublished | false | |
cristin.fulltext | preprint | |
cristin.qualitycode | 1 | |