High precision scalable power converter for accelerator magnets
Haugen, Krister Leonart; Papastergiou, Konstantinos; Asimakopoulos, Panagiotis; Peftitsis, Dimosthenis
Peer reviewed, Journal article
Accepted version
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Date
2022Metadata
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- Institutt for elkraftteknikk [2500]
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Original version
10.1088/1748-0221/17/03/C03021Abstract
The lower conduction power losses and the positive temperature coefficient that favours parallel connections, make Silicon Carbide (SiC) metal oxide semiconductor field-effect transistors (MOSFETs) to be an excellent replacement of existing Silicon insulated gate bipolar transistors (IGBTs) technology. These characteristics combined with high switching frequency operation, enables the design of high-accuracy DC-DC converters with minimised filtering requirements. This paper investigates the design for a converter with high-accuracy current (0.9ppm) supplying a 0.05H electromagnetic load, aiming to achieve the accuracy without the use of active filters, by using SiC MOSFETs and a scalable module-based converter design.