dc.contributor.author | Barrera-Cardenas, Rene Alexander | |
dc.contributor.author | Isobe, Takanori | |
dc.contributor.author | Molinas Cabrera, Maria Marta | |
dc.date.accessioned | 2022-02-18T12:52:10Z | |
dc.date.available | 2022-02-18T12:52:10Z | |
dc.date.created | 2017-01-20T14:14:51Z | |
dc.date.issued | 2016 | |
dc.identifier.isbn | 978-1-5090-1410-1 | |
dc.identifier.uri | https://hdl.handle.net/11250/2980065 | |
dc.language.iso | eng | en_US |
dc.publisher | IEEE | en_US |
dc.relation.ispartof | Power Electronics and Applications (EPE'16 ECCE Europe), 2016 18th European Conference | |
dc.relation.ispartof | Power Electronics and Applications (EPE'16 ECCE Europe), 2016 18th European Conference -
EPE'16, EPE 2016 ECCE Europe | |
dc.title | Comparative study of semiconductor devices based on a meta-parameterised approach: SiC MOSFET vs Si IGBT technologies | en_US |
dc.type | Chapter | en_US |
dc.rights.holder | The published version of the article will not be available due to copyright restrictions by IEEE | en_US |
dc.identifier.doi | 10.1109/IPEMC.2016.7512838 | |
dc.identifier.cristin | 1433931 | |
cristin.unitcode | 194,63,25,0 | |
cristin.unitname | Institutt for teknisk kybernetikk | |
cristin.ispublished | true | |
cristin.fulltext | original | |
cristin.qualitycode | 1 | |