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Comparative study of semiconductor devices based on a meta-parameterised approach: SiC MOSFET vs Si IGBT technologies

dc.contributor.authorBarrera-Cardenas, Rene Alexander
dc.contributor.authorIsobe, Takanori
dc.contributor.authorMolinas Cabrera, Maria Marta
dc.date.accessioned2022-02-18T12:52:10Z
dc.date.available2022-02-18T12:52:10Z
dc.date.created2017-01-20T14:14:51Z
dc.date.issued2016
dc.identifier.isbn978-1-5090-1410-1
dc.identifier.urihttps://hdl.handle.net/11250/2980065
dc.language.isoengen_US
dc.publisherIEEEen_US
dc.relation.ispartofPower Electronics and Applications (EPE'16 ECCE Europe), 2016 18th European Conference
dc.relation.ispartofPower Electronics and Applications (EPE'16 ECCE Europe), 2016 18th European Conference - EPE'16, EPE 2016 ECCE Europe
dc.titleComparative study of semiconductor devices based on a meta-parameterised approach: SiC MOSFET vs Si IGBT technologiesen_US
dc.typeChapteren_US
dc.rights.holderThe published version of the article will not be available due to copyright restrictions by IEEEen_US
dc.identifier.doi10.1109/IPEMC.2016.7512838
dc.identifier.cristin1433931
cristin.unitcode194,63,25,0
cristin.unitnameInstitutt for teknisk kybernetikk
cristin.ispublishedtrue
cristin.fulltextoriginal
cristin.qualitycode1


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