dc.contributor.author | Røst, Håkon Ivarssønn | |
dc.contributor.author | Reed, Benjamen P. | |
dc.contributor.author | Strand, Frode Sneve | |
dc.contributor.author | Durk, Joseph A. | |
dc.contributor.author | Evans, D. Andrew | |
dc.contributor.author | Grubišić-Čabo, Antonija | |
dc.contributor.author | Wan, Gary | |
dc.contributor.author | Cattelan, Mattia | |
dc.contributor.author | Prieto, Mauricio J. | |
dc.contributor.author | Gottlob, Daniel M. | |
dc.contributor.author | Tǎnase, Liviu C. | |
dc.contributor.author | De Souza Caldas, Lucas | |
dc.contributor.author | Schmidt, Thomas | |
dc.contributor.author | Tadich, Anton | |
dc.contributor.author | Cowie, Bruce C. C. | |
dc.contributor.author | Chellappan, Rajesh Kumar | |
dc.contributor.author | Wells, Justin William | |
dc.contributor.author | Cooil, Simon P. | |
dc.date.accessioned | 2022-02-11T12:57:17Z | |
dc.date.available | 2022-02-11T12:57:17Z | |
dc.date.created | 2021-09-06T14:51:10Z | |
dc.date.issued | 2021 | |
dc.identifier.citation | ACS Applied Materials & Interfaces. 2021, 13 (31), 37510-37516. | en_US |
dc.identifier.issn | 1944-8244 | |
dc.identifier.uri | https://hdl.handle.net/11250/2978493 | |
dc.description.abstract | The large-scale formation of patterned, quasi-freestanding graphene structures supported on a dielectric has so far been limited by the need to transfer the graphene onto a suitable substrate and contamination from the associated processing steps. We report μm scale, few-layer graphene structures formed at moderate temperatures (600–700 °C) and supported directly on an interfacial dielectric formed by oxidizing Si layers at the graphene/substrate interface. We show that the thickness of this underlying dielectric support can be tailored further by an additional Si intercalation of the graphene prior to oxidation. This produces quasi-freestanding, patterned graphene on dielectric SiO2 with a tunable thickness on demand, thus facilitating a new pathway to integrated graphene microelectronics. | en_US |
dc.language.iso | eng | en_US |
dc.publisher | American Chemical Society | en_US |
dc.rights | Navngivelse 4.0 Internasjonal | * |
dc.rights.uri | http://creativecommons.org/licenses/by/4.0/deed.no | * |
dc.subject | Grafen | en_US |
dc.subject | Graphene | en_US |
dc.title | A Simplified Method for Patterning Graphene on Dielectric Layers | en_US |
dc.type | Peer reviewed | en_US |
dc.type | Journal article | en_US |
dc.description.version | publishedVersion | en_US |
dc.subject.nsi | VDP::Kondenserte fasers fysikk: 436 | en_US |
dc.subject.nsi | VDP::Condensed matter physics: 436 | en_US |
dc.source.pagenumber | 37510-37516 | en_US |
dc.source.volume | 13 | en_US |
dc.source.journal | ACS Applied Materials & Interfaces | en_US |
dc.source.issue | 31 | en_US |
dc.identifier.doi | 10.1021/acsami.1c09987 | |
dc.identifier.cristin | 1931691 | |
dc.relation.project | Norges forskningsråd: 250555 | en_US |
dc.relation.project | Norges forskningsråd: 245963 | en_US |
dc.relation.project | Norges forskningsråd: 262633 | en_US |
cristin.ispublished | true | |
cristin.fulltext | original | |
cristin.qualitycode | 1 | |