A Simplified Method for Patterning Graphene on Dielectric Layers
Røst, Håkon Ivarssønn; Reed, Benjamen P.; Strand, Frode Sneve; Durk, Joseph A.; Evans, D. Andrew; Grubišić-Čabo, Antonija; Wan, Gary; Cattelan, Mattia; Prieto, Mauricio J.; Gottlob, Daniel M.; Tǎnase, Liviu C.; De Souza Caldas, Lucas; Schmidt, Thomas; Tadich, Anton; Cowie, Bruce C. C.; Chellappan, Rajesh Kumar; Wells, Justin William; Cooil, Simon P.
Peer reviewed, Journal article
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OriginalversjonACS Applied Materials & Interfaces. 2021, 13 (31), 37510-37516. 10.1021/acsami.1c09987
The large-scale formation of patterned, quasi-freestanding graphene structures supported on a dielectric has so far been limited by the need to transfer the graphene onto a suitable substrate and contamination from the associated processing steps. We report μm scale, few-layer graphene structures formed at moderate temperatures (600–700 °C) and supported directly on an interfacial dielectric formed by oxidizing Si layers at the graphene/substrate interface. We show that the thickness of this underlying dielectric support can be tailored further by an additional Si intercalation of the graphene prior to oxidation. This produces quasi-freestanding, patterned graphene on dielectric SiO2 with a tunable thickness on demand, thus facilitating a new pathway to integrated graphene microelectronics.