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dc.contributor.authorHove, Håvard Lefdal
dc.contributor.authorSpro, Ole Christian
dc.contributor.authorGuidi, Giuseppe
dc.contributor.authorPeftitsis, Dimosthenis
dc.date.accessioned2021-03-09T08:38:38Z
dc.date.available2021-03-09T08:38:38Z
dc.date.created2020-09-02T10:00:36Z
dc.date.issued2020
dc.identifier.citationMaterials Science Forum. 2020, 1004 856-864.en_US
dc.identifier.issn0255-5476
dc.identifier.urihttps://hdl.handle.net/11250/2732284
dc.description.abstractThis paper presents improvements to a SPICE model for a commercially available SiC MOSFET to avoid convergence errors while still providing reliable simulation results. Functionality in the internal part of the model that shapes the transconductance of the device according to its junction temperature and gate-source voltage dependency has been improved to provide a continuous characteristic rather than the initial discontinuous performance. Furthermore, the output characteristics from the initial and the proposed model have been compared to lab measurements of an actual device. The results show that the proposed and initial model provide equally reliable simulation results. However, the proposed model does not run into convergence problems.en_US
dc.language.isoengen_US
dc.publisherTrans Tech Publicationsen_US
dc.titleImproved SiC MOSFET SPICE model to avoid convergence errorsen_US
dc.typePeer revieweden_US
dc.typeJournal articleen_US
dc.description.versionacceptedVersionen_US
dc.source.pagenumber856-864en_US
dc.source.volume1004en_US
dc.source.journalMaterials Science Forumen_US
dc.identifier.doi10.4028/www.scientific.net/MSF.1004.856
dc.identifier.cristin1826644
dc.description.localcodeThis article will not be available due to copyright restrictions (c) 2020 by Trans Tech Publicationsen_US
cristin.ispublishedtrue
cristin.fulltextpostprint
cristin.qualitycode1


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