Improved SiC MOSFET SPICE model to avoid convergence errors
Peer reviewed, Journal article
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Original versionMaterials Science Forum. 2020, 1004 856-864. 10.4028/www.scientific.net/MSF.1004.856
This paper presents improvements to a SPICE model for a commercially available SiC MOSFET to avoid convergence errors while still providing reliable simulation results. Functionality in the internal part of the model that shapes the transconductance of the device according to its junction temperature and gate-source voltage dependency has been improved to provide a continuous characteristic rather than the initial discontinuous performance. Furthermore, the output characteristics from the initial and the proposed model have been compared to lab measurements of an actual device. The results show that the proposed and initial model provide equally reliable simulation results. However, the proposed model does not run into convergence problems.