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dc.contributor.authorBarrera-Cardenas, Rene
dc.contributor.authorIsobe, Takanori
dc.contributor.authorMolinas Cabrera, Maria Marta
dc.date.accessioned2019-04-12T08:18:07Z
dc.date.available2019-04-12T08:18:07Z
dc.date.created2018-10-09T10:38:47Z
dc.date.issued2018
dc.identifier.citationIEEJ Journal of Industry Applications. 2018, 7 (3), 210-217.nb_NO
dc.identifier.issn2187-1094
dc.identifier.urihttp://hdl.handle.net/11250/2594405
dc.description.abstractThis paper presents a meta-parameterized approach for the evaluation of Power Switch Modules (PSMs) in power converters. General models and parameters for the evaluation of power losses and volume of a PSM are presented. Then, meta-parameterization is performed for two semiconductor devices that have been successfully commercialized for low/medium power converters, Si-IGBTs, and SiC-MOSFETs. A comparative analysis based on the efficiency and power density of the considered technologies is presented. A bidirectional non-isolated DC-DC converter topology is considered as application example in order to show how meta-parameters can be used in comparative studies to optimize device selection.nb_NO
dc.language.isoengnb_NO
dc.publisherThe Institute of Electrical Engineers of Japannb_NO
dc.titleA meta-parameterized approach for the evaluation of semiconductor technologies - A comparison between SiC-MOSFET and Si-IGBT technologiesnb_NO
dc.typeJournal articlenb_NO
dc.typePeer reviewednb_NO
dc.description.versionpublishedVersionnb_NO
dc.source.pagenumber210-217nb_NO
dc.source.volume7nb_NO
dc.source.journalIEEJ Journal of Industry Applicationsnb_NO
dc.source.issue3nb_NO
dc.identifier.doi10.1541/ieejjia.7.210
dc.identifier.cristin1618936
dc.description.localcodeThis article will not be available due to copyright restrictions (c) 2018 by The Institute of Electrical Engineers of Japannb_NO
cristin.unitcode194,63,25,0
cristin.unitnameInstitutt for teknisk kybernetikk
cristin.ispublishedtrue
cristin.fulltextpreprint
cristin.qualitycode1


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