A meta-parameterized approach for the evaluation of semiconductor technologies - A comparison between SiC-MOSFET and Si-IGBT technologies
Journal article, Peer reviewed
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Original versionIEEJ Journal of Industry Applications. 2018, 7 (3), 210-217. 10.1541/ieejjia.7.210
This paper presents a meta-parameterized approach for the evaluation of Power Switch Modules (PSMs) in power converters. General models and parameters for the evaluation of power losses and volume of a PSM are presented. Then, meta-parameterization is performed for two semiconductor devices that have been successfully commercialized for low/medium power converters, Si-IGBTs, and SiC-MOSFETs. A comparative analysis based on the efficiency and power density of the considered technologies is presented. A bidirectional non-isolated DC-DC converter topology is considered as application example in order to show how meta-parameters can be used in comparative studies to optimize device selection.