A meta-parameterized approach for the evaluation of semiconductor technologies - A comparison between SiC-MOSFET and Si-IGBT technologies

Abstract

This paper presents a meta-parameterized approach for the evaluation of Power Switch Modules (PSMs) in power converters. General models and parameters for the evaluation of power losses and volume of a PSM are presented. Then, meta-parameterization is performed for two semiconductor devices that have been successfully commercialized for low/medium power converters, Si-IGBTs, and SiC-MOSFETs. A comparative analysis based on the efficiency and power density of the considered technologies is presented. A bidirectional non-isolated DC-DC converter topology is considered as application example in order to show how meta-parameters can be used in comparative studies to optimize device selection.