dc.contributor.author | Munshi, A Mazid | |
dc.contributor.author | Kim, Dong-Chul | |
dc.contributor.author | Heimdal, Carl Philip J | |
dc.contributor.author | Heilmann, Martin | |
dc.contributor.author | Christiansen, Silke | |
dc.contributor.author | Vullum, Per Erik | |
dc.contributor.author | Van Helvoort, Antonius | |
dc.contributor.author | Weman, Helge | |
dc.date.accessioned | 2019-03-28T11:34:23Z | |
dc.date.available | 2019-03-28T11:34:23Z | |
dc.date.created | 2019-01-02T10:20:03Z | |
dc.date.issued | 2018 | |
dc.identifier.issn | 0003-6951 | |
dc.identifier.uri | http://hdl.handle.net/11250/2592181 | |
dc.description.abstract | Wide-bandgap group III-nitride semiconductors are of special interest for applications in ultraviolet light emitting diodes, photodetectors, and lasers. However, epitaxial growth of high-quality III-nitride semiconductors on conventional single-crystalline substrates is challenging due to the lattice mismatch and differences in the thermal expansion coefficients. Recently, it has been shown that graphene, a two-dimensional material, can be used as a substrate for growing high-quality III–V semiconductors via quasi-van der Waals epitaxy and overcome the named challenges. Here, we report selective area growth of AlGaN nanopyramids on hole mask patterned single-layer graphene using metal-organic vapor phase epitaxy. The nanopyramid bases have a hexagonal shape with a very high nucleation yield. After subsequent AlGaN/GaN/AlGaN overgrowth on the six {101⎯⎯1}101¯1 semi-polar side facets of the nanopyramids, intense room-temperature cathodoluminescence emission is observed at 365 nm with whispering gallery-like modes. This work opens up a route for achieving III-nitride opto-electronic devices on graphene substrates in the ultraviolet region for future applications. | nb_NO |
dc.language.iso | eng | nb_NO |
dc.publisher | AIP Publishing | nb_NO |
dc.relation.uri | http://aip.scitation.org/doi/pdf/10.1063/1.5052054?class=pdf | |
dc.rights | Navngivelse 4.0 Internasjonal | * |
dc.rights.uri | http://creativecommons.org/licenses/by/4.0/deed.no | * |
dc.title | Selective area growth of AlGaN nanopyramid arrays on graphene by metal-organic vapor phase epitaxy | nb_NO |
dc.type | Journal article | nb_NO |
dc.type | Peer reviewed | nb_NO |
dc.description.version | publishedVersion | nb_NO |
dc.source.volume | 133 | nb_NO |
dc.source.journal | Applied Physics Letters | nb_NO |
dc.identifier.doi | 10.1063/1.5052054 | |
dc.identifier.cristin | 1648243 | |
dc.relation.project | Norges forskningsråd: 259553 | nb_NO |
dc.relation.project | Norges forskningsråd: 245963 | nb_NO |
dc.relation.project | Norges forskningsråd: 197405 | nb_NO |
dc.relation.project | Norges forskningsråd: 264206 | nb_NO |
dc.relation.project | Norges forskningsråd: 221860 | nb_NO |
dc.description.localcode | Licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). | nb_NO |
cristin.unitcode | 194,66,20,0 | |
cristin.unitcode | 194,63,35,0 | |
cristin.unitname | Institutt for fysikk | |
cristin.unitname | Institutt for elektroniske systemer | |
cristin.ispublished | true | |
cristin.fulltext | original | |
cristin.qualitycode | 2 | |