| dc.contributor.author | Kopacz, Rafal | |
| dc.contributor.author | Peftitsis, Dimosthenis | |
| dc.contributor.author | Rabkowski, Jacek | |
| dc.date.accessioned | 2017-12-19T11:56:13Z | |
| dc.date.available | 2017-12-19T11:56:13Z | |
| dc.date.created | 2017-12-12T13:25:24Z | |
| dc.date.issued | 2017 | |
| dc.identifier.isbn | 978-90-75815-27-6 | |
| dc.identifier.uri | http://hdl.handle.net/11250/2472861 | |
| dc.description.abstract | This paper presents an experimental study on series-connection of Silicon Carbide MOSFETs. The switching performance of two series-connected SiC MOSFETs rated at 1200 V and having on-state resistances of 80 mΩ was tested using a double-pulse test circuit at blocking voltages up to 1 kV DC and currents up to 50 A. The design and experimental validation of a suitable double-pulse test setup and gate drive circuits are also shown. | nb_NO |
| dc.language.iso | eng | nb_NO |
| dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) | nb_NO |
| dc.relation.ispartof | 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe), 2017 | |
| dc.title | Experimental study on fast-switching series-connected SiC MOSFETs | nb_NO |
| dc.type | Chapter | nb_NO |
| dc.description.version | submittedVersion | nb_NO |
| dc.identifier.doi | 10.23919/EPE17ECCEEurope.2017.8099266 | |
| dc.identifier.cristin | 1526291 | |
| dc.description.localcode | © 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | nb_NO |
| cristin.unitcode | 194,63,20,0 | |
| cristin.unitname | Institutt for elkraftteknikk | |
| cristin.ispublished | true | |
| cristin.fulltext | preprint | |
| cristin.qualitycode | 1 | |
