Experimental study on fast-switching series-connected SiC MOSFETs

Abstract

This paper presents an experimental study on series-connection of Silicon Carbide MOSFETs. The switching performance of two series-connected SiC MOSFETs rated at 1200 V and having on-state resistances of 80 mΩ was tested using a double-pulse test circuit at blocking voltages up to 1 kV DC and currents up to 50 A. The design and experimental validation of a suitable double-pulse test setup and gate drive circuits are also shown.