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dc.contributor.authorBrataas, Arne
dc.contributor.authorMalshukov, Anatolii
dc.contributor.authorTserkovnyak, Y
dc.date.accessioned2015-09-29T11:26:01Z
dc.date.accessioned2015-10-15T14:08:54Z
dc.date.available2015-09-29T11:26:01Z
dc.date.available2015-10-15T14:08:54Z
dc.date.issued2007
dc.identifier.citationNew Journal of Physics 2007, 9(345)nb_NO
dc.identifier.issn1367-2630
dc.identifier.urihttp://hdl.handle.net/11250/2356260
dc.description.abstractWe consider Rashba spin–orbit effects on spin transport driven by an electric field in semiconductor quantum wells. We derive spin diffusion equations that are valid when the mean free path and the Rashba spin–orbit interaction vary on length scales larger than the mean free path in the weak spin–orbit coupling limit. From these general diffusion equations, we derive boundary conditions between regions of different spin–orbit couplings. We show that spin injection is feasible when the electric field is perpendicular to the boundary between two regions. When the electric field is parallel to the boundary, spin injection only occurs when the mean free path changes within the boundary, in agreement with the recent work by Tserkovnyak et al (Preprint cond-mat/0610190).nb_NO
dc.language.isoengnb_NO
dc.publisherIOP Publishingnb_NO
dc.titleSpin injection in quantum wells with spatially dependent rashba interactionnb_NO
dc.typeJournal articlenb_NO
dc.typePeer revieweden_GB
dc.date.updated2015-09-29T11:26:01Z
dc.source.volume9nb_NO
dc.source.journalNew Journal of Physicsnb_NO
dc.source.issue345nb_NO
dc.identifier.doi10.1088/1367-2630/9/9/345
dc.identifier.cristin370663
dc.description.localcode© IOP Publishing Ltd and Deutsche Physikalische Gesellschaft. Creative Commons Attribution License.nb_NO


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