Blar i Institutt for fysikk på forfatter "Ren, Dingding"
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Epitaxially grown III-arsenide-antimonide nanowires for optoelectronic applications
Ren, Dingding; Ahtapodov, Lyubomir; Van Helvoort, Antonius; Weman, Helge; Fimland, Bjørn-Ove (Journal article; Peer reviewed, 2019)Epitaxially grown ternary III-arsenide-antimonide (III-As–Sb) nanowires (NWs) are increasingly attracting attention due to their feasibility as a platform for the integration of largely lattice-mismatched antimonide-based ... -
Single-Mode Near-Infrared Lasing in a GaAsSb-Based Nanowire Superlattice at Room Temperature
Ren, Dingding; Ahtapodov, Lyubomir; Nilsen, Julie Stene; Yang, Jianfeng; Gustafsson, Anders; Huh, Junghwan; Conibeer, G; Van Helvoort, Antonius; Fimland, Bjørn-Ove; Weman, Helge (Journal article; Peer reviewed, 2018)Semiconductor nanowire lasers can produce guided coherent light emission with miniaturized geometry, bringing about new possibilities for a variety of applications including nanophotonic circuits, optical sensing, and ... -
Using FIB-SEM as a Platform for the Positioning and Correlated Characterization of III-V Nanowires
Mosberg, Aleksander Buseth; Ren, Dingding; Fauske, Vidar Tonaas; Fimland, Bjørn-Ove; Van Helvoort, Antonius (Journal article; Peer reviewed, 2018)