dc.contributor.author | Røst, Håkon | |
dc.contributor.author | Cooil, Simon Phillip | |
dc.contributor.author | Åsland, Anna Cecilie | |
dc.contributor.author | Hu, Jinbang | |
dc.contributor.author | Ali, Ayaz | |
dc.contributor.author | Taniguchi, Takashi | |
dc.contributor.author | Watanabe, Kenji | |
dc.contributor.author | Belle, Branson Delano | |
dc.contributor.author | Holst, Bodil | |
dc.contributor.author | Sadowski, Jerzy | |
dc.contributor.author | Mazzola, Federico | |
dc.contributor.author | Wells, Justin William | |
dc.date.accessioned | 2024-01-30T13:23:55Z | |
dc.date.available | 2024-01-30T13:23:55Z | |
dc.date.created | 2023-08-24T09:05:41Z | |
dc.date.issued | 2023 | |
dc.identifier.citation | Nano Letters. 2023, 23 (16), 7539-7545. | en_US |
dc.identifier.issn | 1530-6984 | |
dc.identifier.uri | https://hdl.handle.net/11250/3114520 | |
dc.description.abstract | Understanding the collective behavior of the quasiparticles in solid-state systems underpins the field of non-volatile electronics, including the opportunity to control many-body effects for well-desired physical phenomena and their applications. Hexagonal boron nitride (hBN) is a wide energy bandgap semiconductor, showing immense potential as a platform for low-dimensional device heterostructures. It is an inert dielectric used for gated devices, having a negligible orbital hybridization when placed in contact with other systems. Despite its inertness, we discover a large electron mass enhancement in few-layer hBN affecting the lifetime of the pi-band states. We show that the renormalization is phonon-mediated and consistent with both single- and multiple-phonon scattering events. Our findings thus unveil a so-far unknown many-body state in a wide-bandgap insulator, having important implications for devices using hBN as one of their building blocks. | en_US |
dc.description.abstract | Phonon-Mediated Quasiparticle Lifetime Renormalizations in Few-Layer Hexagonal Boron Nitride | en_US |
dc.language.iso | eng | en_US |
dc.publisher | ACS Publications | en_US |
dc.rights | Navngivelse 4.0 Internasjonal | * |
dc.rights.uri | http://creativecommons.org/licenses/by/4.0/deed.no | * |
dc.title | Phonon-Mediated Quasiparticle Lifetime Renormalizations in Few-Layer Hexagonal Boron Nitride | en_US |
dc.title.alternative | Phonon-Mediated Quasiparticle Lifetime Renormalizations in Few-Layer Hexagonal Boron Nitride | en_US |
dc.type | Peer reviewed | en_US |
dc.type | Journal article | en_US |
dc.description.version | publishedVersion | en_US |
dc.subject.nsi | VDP::Nanoteknologi: 630 | en_US |
dc.subject.nsi | VDP::Nanotechnology: 630 | en_US |
dc.subject.nsi | VDP::Nanoteknologi: 630 | en_US |
dc.subject.nsi | VDP::Nanotechnology: 630 | en_US |
dc.source.pagenumber | 7539-7545 | en_US |
dc.source.volume | 23 | en_US |
dc.source.journal | Nano Letters | en_US |
dc.source.issue | 16 | en_US |
dc.identifier.doi | 10.1021/acs.nanolett.3c02086 | |
dc.identifier.cristin | 2169192 | |
dc.relation.project | U.S. Department of Energy (DOE): DE-SC0012704 | en_US |
dc.relation.project | Japan Society for the Promotion of Science (JSPS): 19H05790 | en_US |
dc.relation.project | Japan Society for the Promotion of Science (JSPS): 20H00354 | en_US |
dc.relation.project | Japan Society for the Promotion of Science (JSPS): 21H05233 | en_US |
dc.relation.project | Norges forskningsråd: 315330 | en_US |
dc.relation.project | Norges forskningsråd: 262633 | en_US |
dc.relation.project | Norges forskningsråd: 280788 | en_US |
dc.relation.project | Norges forskningsråd: 324183 | en_US |
dc.relation.project | Norges forskningsråd: 245963 | en_US |
cristin.ispublished | true | |
cristin.fulltext | original | |
cristin.qualitycode | 2 | |