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dc.contributor.authorPhilipps, Daniel Alexander
dc.contributor.authorUbostad, Tobias
dc.contributor.authorPeftitsis, Dimosthenis
dc.date.accessioned2023-02-07T09:42:27Z
dc.date.available2023-02-07T09:42:27Z
dc.date.created2022-11-15T13:17:23Z
dc.date.issued2022
dc.identifier.isbn978-4-8868-6425-3
dc.identifier.urihttps://hdl.handle.net/11250/3048784
dc.description.abstractState-of-the art Silicon Carbide Power MOS-FETs switch at unprecedented speed. Therefore, special attention must be paid to the circuit design of dynamic characterization setups. Only if parasitic layout inductances are minimal, the electrical behavior during switching tran-sients is dominated by the MOSFET characteristics, fast switching is compatible with low overshoot and ringing, and measurement data constitutes reliable characterization data. This paper presents a low inductive test platform for devices in a TO-247-3 housing. The test platform contains measurement terminals for high bandwidth measurement of both current and voltage. The experiments presented in this paper prove that high-fidelity dynamic characterization data can be obtained from Double-Pulse Tests (DPTs) using the presented test platform. Equally accurate measurements can be obtained in long-term tests and under both hard- and soft-switching conditions.en_US
dc.description.abstractLow Inductive Platform for Long- and Short-term Dynamic Charaterization of SiC MOSFETsen_US
dc.language.isoengen_US
dc.publisherIEEEen_US
dc.relation.ispartof2022 International Power Electronics Conference (IPEC-Himeji 2022- ECCE Asia)
dc.relation.urihttps://ieeexplore.ieee.org/document/9807002/authors#authors
dc.titleLow Inductive Platform for Long- and Short-term Dynamic Charaterization of SiC MOSFETsen_US
dc.title.alternativeLow Inductive Platform for Long- and Short-term Dynamic Charaterization of SiC MOSFETsen_US
dc.typeChapteren_US
dc.description.versionsubmittedVersionen_US
dc.identifier.doi10.23919/IPEC-Himeji2022-ECCE53331.2022.9807002
dc.identifier.cristin2074224
dc.relation.projectNorges forskningsråd: 287820en_US
cristin.ispublishedtrue
cristin.fulltextpreprint
cristin.qualitycode1


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