dc.contributor.author | Konstantinou, Konstantinos | |
dc.contributor.author | Elliott, Stephen R. | |
dc.contributor.author | Akola, Jaakko | |
dc.date.accessioned | 2023-02-01T14:01:11Z | |
dc.date.available | 2023-02-01T14:01:11Z | |
dc.date.created | 2022-10-10T10:34:02Z | |
dc.date.issued | 2022 | |
dc.identifier.citation | Journal of Materials Chemistry C. 2022, (17), . | en_US |
dc.identifier.issn | 2050-7526 | |
dc.identifier.uri | https://hdl.handle.net/11250/3047777 | |
dc.description.abstract | While the amorphous state of a chalcogenide phase-change material is formed inside an electronic-memory device via Joule heating, caused by an applied voltage pulse, it is in the presence of excess field-induced electrons and holes. Here, hybrid density-functional-theory calculations for glassy Ge2Sb2Te5 demonstrate that extra electrons are trapped spontaneously, creating deep traps in the band gap. Hole self-trapping is also energetically favourable, producing states around midgap. The traps have a relatively low ionization energy, indicating that they can easily be thermally released. Near-linear triatomic Te–Ge/Sb–Te/Ge/Sb environments are the structural motifs where the extra electrons/holes are trapped inside the glass network, highlighting that the intrinsic axial bonds of octahedral-like sites in amorphous Ge2Sb2Te5 can serve as charge-trapping centres. Trapping of two electrons in a chain-like structure of connected triads results in breaking of some of these highly polarizable long bonds. These results establish the foundations of the origin of charge trapping in amorphous phase-change materials, and they may have important implications for our understanding of resistance drift in electronic-memory devices and of electronic-excitation-induced athermal melting. | en_US |
dc.language.iso | eng | en_US |
dc.publisher | Royal Society of Chemistry | en_US |
dc.rights | Navngivelse 4.0 Internasjonal | * |
dc.rights.uri | http://creativecommons.org/licenses/by/4.0/deed.no | * |
dc.title | Inherent electron and hole trapping in amorphous phase-change memory materials: Ge<inf>2</inf>Sb<inf>2</inf>Te<inf>5</inf> | en_US |
dc.title.alternative | Inherent electron and hole trapping in amorphous phase-change memory materials: Ge<inf>2</inf>Sb<inf>2</inf>Te<inf>5</inf> | en_US |
dc.type | Peer reviewed | en_US |
dc.type | Journal article | en_US |
dc.description.version | publishedVersion | en_US |
dc.source.pagenumber | 0 | en_US |
dc.source.volume | 10 | en_US |
dc.source.journal | Journal of Materials Chemistry C | en_US |
dc.source.issue | 17 | en_US |
dc.identifier.doi | 10.1039/d2tc00486k | |
dc.identifier.cristin | 2059965 | |
cristin.ispublished | true | |
cristin.fulltext | original | |
cristin.qualitycode | 1 | |