dc.contributor.author | Dahl-Hansen, Runar Plunnecke | |
dc.contributor.author | Tyholdt, Frode | |
dc.contributor.author | Gjessing, Jo | |
dc.contributor.author | Vogl, Andreas | |
dc.contributor.author | Wittendorp, Paul | |
dc.contributor.author | Vedum, Jon | |
dc.contributor.author | Tybell, Per Thomas Martin | |
dc.date.accessioned | 2022-10-14T07:33:15Z | |
dc.date.available | 2022-10-14T07:33:15Z | |
dc.date.created | 2021-04-07T17:29:29Z | |
dc.date.issued | 2021 | |
dc.identifier.citation | Journal of microelectromechanical systems. 2021, 30 (1), 105-115. | en_US |
dc.identifier.issn | 1057-7157 | |
dc.identifier.uri | https://hdl.handle.net/11250/3026063 | |
dc.description.abstract | Lifetime and reliability in realistic operating conditions are important parameters for the application of thin-film piezoelectric microelectromechanical systems (piezoMEMS) based on lead zirconate titanate (PZT). Humidity can induce time-dependent dielectric breakdown at a higher rate compared to dry conditions, and significantly alter the dynamic behavior of piezoMEMS-devices. Here we assess the lifetime and reliability of PZT-based micromirrors with and without humidity barriers operated at 23°C in an ambient of 0 and 95 % relative humidity. The correlation of the dynamic response, as well as the ferroelectric, dielectric, and leakage properties, with degradation time was investigated. In humid conditions, the median timeto-failure was increased from 2.7×10 4 [1.9×10 4 -4.0×10 4 ] s to 1.1×10 6 [0.9×10 6 -1.5×10 6 ] s at 20 VAC continuous unipolar actuation, by using a 40 nm thick Al 2 O 3 humidity barrier. However, the initial maximum angular deflection, polarization, and dielectric permittivity decreased by about 6, 11, and 12 %, respectively, for Al 2 O 3 capped devices. For both bare and encapsulated devices, the onset of electrothermal breakdown-events was the dominant cause of degradation. Severe distortions in the device's dynamic behavior, together with failure from loss of angular deflection, preceded time-dependent dielectric breakdown in 95% relative humidity. Moreover, due to the film-substrate stress transfer sensitivity of thin-film devices, water-induced degradation affects the reliability of thin-film piezoMEMS differently than bulk piezoMEMS. | en_US |
dc.language.iso | eng | en_US |
dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) | en_US |
dc.title | On the effect of water-induced degradation of thin-film piezoelectric microelectromechanical systems | en_US |
dc.type | Peer reviewed | en_US |
dc.type | Journal article | en_US |
dc.description.version | acceptedVersion | en_US |
dc.rights.holder | © IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | en_US |
dc.source.pagenumber | 105-115 | en_US |
dc.source.volume | 30 | en_US |
dc.source.journal | Journal of microelectromechanical systems | en_US |
dc.source.issue | 1 | en_US |
dc.identifier.doi | 10.1109/JMEMS.2020.3031201 | |
dc.identifier.cristin | 1902832 | |
cristin.ispublished | true | |
cristin.fulltext | original | |
cristin.qualitycode | 1 | |