dc.contributor.author | Zhu, Zhen | |
dc.contributor.author | Sippola, Perttu | |
dc.contributor.author | Ylivaara, Oili M E | |
dc.contributor.author | Modanese, Chiara | |
dc.contributor.author | Di Sabatino Lundberg, Marisa | |
dc.contributor.author | Mizohata, Kenichiro | |
dc.contributor.author | Merdes, Saoussen | |
dc.contributor.author | Lipsanen, Harri | |
dc.contributor.author | Savin, Hele | |
dc.date.accessioned | 2022-05-02T14:23:11Z | |
dc.date.available | 2022-05-02T14:23:11Z | |
dc.date.created | 2020-03-02T14:28:44Z | |
dc.date.issued | 2019 | |
dc.identifier.citation | Nanoscale Research Letters. 2019, 14 . | en_US |
dc.identifier.issn | 1931-7573 | |
dc.identifier.uri | https://hdl.handle.net/11250/2993695 | |
dc.description.abstract | In this work, we report the successful growth of high-quality SiO2 films by low-temperature plasma-enhanced atomic layer deposition using an oxidant which is compatible with moisture/oxygen sensitive materials. The SiO2 films were grown at 90 °C using CO2 and Bis(tertiary-butylamino)silane as process precursors. Growth, chemical composition, density, optical properties, and residual stress of SiO2 films were investigated. SiO2 films having a saturated growth-per-cycle of ~ 1.15 Å/cycle showed a density of ~ 2.1 g/cm3, a refractive index of ~ 1.46 at a wavelength of 632 nm, and a low tensile residual stress of ~ 30 MPa. Furthermore, the films showed low impurity levels with bulk concentrations of ~ 2.4 and ~ 0.17 at. % for hydrogen and nitrogen, respectively, whereas the carbon content was found to be below the measurement limit of time-of-flight elastic recoil detection analysis. These results demonstrate that CO2 is a promising oxidizing precursor for moisture/oxygen sensitive materials related plasma-enhanced atomic layer deposition processes. | en_US |
dc.language.iso | eng | en_US |
dc.publisher | Springer | en_US |
dc.rights | Navngivelse 4.0 Internasjonal | * |
dc.rights.uri | http://creativecommons.org/licenses/by/4.0/deed.no | * |
dc.title | Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide | en_US |
dc.title.alternative | Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO <sub>2</sub> Using Carbon Dioxide | en_US |
dc.type | Peer reviewed | en_US |
dc.type | Journal article | en_US |
dc.description.version | publishedVersion | en_US |
dc.source.pagenumber | 8 | en_US |
dc.source.volume | 14 | en_US |
dc.source.journal | Nanoscale Research Letters | en_US |
dc.identifier.doi | 10.1186/s11671-019-2889-y | |
dc.identifier.cristin | 1798969 | |
cristin.ispublished | true | |
cristin.fulltext | original | |
cristin.qualitycode | 1 | |