dc.contributor.author | Vatanparast, Maryam | |
dc.contributor.author | Egoavil, Ricardo | |
dc.contributor.author | Reenaas, Turid Worren | |
dc.contributor.author | verbeeck, Johan | |
dc.contributor.author | Holmestad, Randi | |
dc.contributor.author | Vullum, Per Erik | |
dc.date.accessioned | 2022-04-11T12:31:46Z | |
dc.date.available | 2022-04-11T12:31:46Z | |
dc.date.created | 2017-07-11T16:25:05Z | |
dc.date.issued | 2017 | |
dc.identifier.citation | Ultramicroscopy. 2017, 182 92-98. | en_US |
dc.identifier.issn | 0304-3991 | |
dc.identifier.uri | https://hdl.handle.net/11250/2990957 | |
dc.description.abstract | In the present work Cs aberration corrected and monochromated scanning transmission electron microscopy electron energy loss spectroscopy (STEM-EELS) has been used to explore experimental set-ups that allow bandgaps of high refractive index materials to be determined. Semi-convergence and –collection angles in the µrad range were combined with off-axis or dark field EELS to avoid relativistic losses and guided light modes in the low loss range to contribute to the acquired EEL spectra. Off-axis EELS further supressed the zero loss peak and the tail of the zero loss peak. The bandgap of several GaAs-based materials were successfully determined by simple regression analyses of the background subtracted EEL spectra. The presented set-up does not require that the acceleration voltage is set to below the Čerenkov limit and can be applied over the entire acceleration voltage range of modern TEMs and for a wide range of specimen thicknesses. | en_US |
dc.language.iso | eng | en_US |
dc.publisher | Elsevier | en_US |
dc.title | Bandgap measurement of high refractive index materials by off-axis EELS | en_US |
dc.type | Journal article | en_US |
dc.type | Peer reviewed | en_US |
dc.description.version | publishedVersion | en_US |
dc.rights.holder | The published version of the article will not be available due to copyright restrictions by Elsevier | en_US |
dc.source.pagenumber | 92-98 | en_US |
dc.source.volume | 182 | en_US |
dc.source.journal | Ultramicroscopy | en_US |
dc.identifier.cristin | 1481947 | |
cristin.unitcode | 194,66,20,0 | |
cristin.unitname | Institutt for fysikk | |
cristin.ispublished | true | |
cristin.fulltext | original | |
cristin.qualitycode | 1 | |