dc.contributor.author | Philipps, Daniel Alexander | |
dc.contributor.author | Peftitsis, Dimosthenis | |
dc.date.accessioned | 2022-04-05T06:47:25Z | |
dc.date.available | 2022-04-05T06:47:25Z | |
dc.date.created | 2021-09-20T11:47:15Z | |
dc.date.issued | 2021 | |
dc.identifier.isbn | 978-3-8007-5515-8 | |
dc.identifier.uri | https://hdl.handle.net/11250/2989752 | |
dc.description.abstract | Due to the superior material characteristics of Silicon Carbide (SiC), the use of SiC MOSFETs enables higher system power density or efficiency depending on the design perspective. To identify the improvement potential in the operation of a device, precise characterization is crucial. This paper presents a flexible and easily reconfigurable test setup to characterize the dynamic behavior of SiC MOSFETs under both hard- and soft-switching conditions at blocking voltages of up to 900 V and currents up to 300 A. It features a balancing circuit that enables long term test operation in both switching modes and as a future power cycling test setup. | en_US |
dc.language.iso | eng | en_US |
dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) | en_US |
dc.relation.ispartof | PCIM Europe digital days 2021; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management | |
dc.title | A Flexible Test Setup for Long-Term Dynamic Characterization of SiC MOSFETs under Soft- and Hard-Switching Conditions | en_US |
dc.type | Chapter | en_US |
dc.description.version | acceptedVersion | en_US |
dc.rights.holder | © IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | en_US |
dc.identifier.cristin | 1935929 | |
dc.relation.project | Norges forskningsråd: 287820 | en_US |
cristin.ispublished | true | |
cristin.fulltext | postprint | |
cristin.qualitycode | 1 | |