dc.contributor.author | Kjærnes, Kristoffer | |
dc.contributor.author | Hallsteinsen, Ingrid | |
dc.contributor.author | Chopdekar, R. V. | |
dc.contributor.author | Moreau, Magnus | |
dc.contributor.author | Bolstad, Torstein | |
dc.contributor.author | Svenum, Ingeborg-Helene | |
dc.contributor.author | Selbach, Sverre Magnus | |
dc.contributor.author | Tybell, Per Thomas Martin | |
dc.date.accessioned | 2022-03-07T13:03:12Z | |
dc.date.available | 2022-03-07T13:03:12Z | |
dc.date.created | 2021-12-21T14:32:48Z | |
dc.date.issued | 2021 | |
dc.identifier.issn | 2469-9950 | |
dc.identifier.uri | https://hdl.handle.net/11250/2983439 | |
dc.description.abstract | Antiferromagnetic (AF) thin films typically exhibit a multidomain state, and control of the AF Néel vector is challenging, as AF materials are robust to magnetic perturbations. In this paper, uniaxial Néel vector control is demonstrated by relying on anisotropic strain engineering of epitaxial thin films of the prototypical AF material LaFeO3 (LFO). Orthorhombic (011)- and (101)-oriented DyScO3, GdScO3, and NdGaO3 substrates are used to engineer different anisotropic in-plane strain states. The anisotropic in-plane strain stabilizes structurally monodomain monoclinic LFO thin films. The uniaxial Néel vector is found along the tensile strained b axis, contrary to bulk LFO having the Néel vector along the shorter a axis, and no magnetic domains are found. Hence, anisotropic strain engineering is a viable tool for designing unique functional responses, further enabling AF materials for mesoscopic device technology. | en_US |
dc.language.iso | eng | en_US |
dc.publisher | American Physical Society | en_US |
dc.title | Uniaxial Néel vector control in perovskite oxide thin films by anisotropic strain engineering | en_US |
dc.type | Peer reviewed | en_US |
dc.type | Journal article | en_US |
dc.description.version | publishedVersion | en_US |
dc.rights.holder | © 2021 American Physical Society | en_US |
dc.source.volume | 103 | en_US |
dc.source.journal | Physical review B (PRB) | en_US |
dc.source.issue | 224435 | en_US |
dc.identifier.doi | 10.1103/PhysRevB.103.224435 | |
dc.identifier.cristin | 1971102 | |
cristin.ispublished | true | |
cristin.fulltext | original | |
cristin.fulltext | postprint | |
cristin.qualitycode | 2 | |