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dc.contributor.authorPaudel, Gagan
dc.contributor.authorKhromov, Sergey
dc.contributor.authorKasik, Martin
dc.contributor.authorRoven, Hans Jørgen
dc.contributor.authorDi Sabatino Lundberg, Marisa
dc.date.accessioned2022-02-14T09:53:30Z
dc.date.available2022-02-14T09:53:30Z
dc.date.created2020-07-09T12:33:20Z
dc.date.issued2020
dc.identifier.citationJournal of Analytical Atomic Spectrometry. 2020, 35 (7), 1450-1457.en_US
dc.identifier.issn0267-9477
dc.identifier.urihttps://hdl.handle.net/11250/2978676
dc.description.abstractDepth profiling is an attractive approach for analysis of non-homogeneous samples and layered materials. This application requires an optimum sputtered crater profile, which means a flat crater bottom with steep walls and a low roughness. It is known that discharge parameters are one of the most important factors influencing the crater shape. Hence, in the present work, different combinations of GDMS discharge current, voltage and argon flow, giving a flat crater bottom in tantalum are presented. A combination of mechanical profilometry, scanning electron microscopy and electron back scattered diffraction is used to show the contribution of grain orientation on various sputtering characteristics and crater bottom roughness. The results of the study indicate that differential sputtering is consistent at both higher and lower discharge conditions. The crater bottom roughness can be attributed to the differential sputtering of grains in polycrystalline materials.en_US
dc.language.isoengen_US
dc.publisherRoyal Society of Chemistryen_US
dc.titleInfluence of polycrystalline material on crater shape optimization and roughness using low power/low-pressure direct-current glow discharge mass spectrometryen_US
dc.typePeer revieweden_US
dc.typeJournal articleen_US
dc.description.versionacceptedVersionen_US
dc.rights.holderThis is the authors' accepted manuscript to an article published by Royal Society of Chemistry.en_US
dc.source.pagenumber1450-1457en_US
dc.source.volume35en_US
dc.source.journalJournal of Analytical Atomic Spectrometryen_US
dc.source.issue7en_US
dc.identifier.doi10.1039/d0ja00055h
dc.identifier.cristin1819070
cristin.ispublishedtrue
cristin.fulltextpostprint
cristin.qualitycode1


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