dc.contributor.author | Mukherjee, Anjan | |
dc.contributor.author | Ren, Dingding | |
dc.contributor.author | Vullum, Per Erik | |
dc.contributor.author | Huh, Junghwan | |
dc.contributor.author | Fimland, Bjørn-Ove | |
dc.contributor.author | Weman, Helge | |
dc.date.accessioned | 2021-09-29T13:04:29Z | |
dc.date.available | 2021-09-29T13:04:29Z | |
dc.date.created | 2021-09-20T16:19:00Z | |
dc.date.issued | 2021 | |
dc.identifier.citation | ACS Photonics. 2021, 8 (8), 2355-2366. | en_US |
dc.identifier.issn | 2330-4022 | |
dc.identifier.uri | https://hdl.handle.net/11250/2786066 | |
dc.description.abstract | Here we demonstrate a more effective use of III–V photoconversion material to achieve an ultrahigh power-per-weight ratio from a solar cell utilizing an axial p-i-n junction GaAs/AlGaAs nanowire (NW) array grown by molecular beam epitaxy on a Si substrate. By analyzing single NW multicontact devices, we first show that an n-GaAs shell is self-formed radially outside the axial p- and i-core of the GaAs NW during n-core growth, which significantly deteriorates the rectification property of the NWs in the axial direction. When employing a selective-area ex situ etching process for the n-GaAs shell, a clear rectification of the axial NW p-i-n junction with a high on/off ratio was revealed. Such a controlled etching process of the self-formed n-GaAs shell was further introduced to fabricate axial p-i-n junction GaAs NW array solar cells. Employing this method, a GaAs NW array solar cell with only ∼1.3% areal coverage of the NWs shows a photoconversion efficiency of ∼7.7% under 1 Sun intensity (AM 1.5G), which is the highest achieved efficiency from any single junction GaAs NW solar cell grown on a Si substrate so far. This corresponds to a power-per-weight ratio of the active III–V photoconversion material as high as 560 W/g, showing great promise for high-efficiency and low-cost III–V NW solar cells and III–V NW/Si tandem solar cells. | en_US |
dc.language.iso | eng | en_US |
dc.publisher | American Chemical Society | en_US |
dc.rights | Navngivelse 4.0 Internasjonal | * |
dc.rights.uri | http://creativecommons.org/licenses/by/4.0/deed.no | * |
dc.title | GaAs/AlGaAs Nanowire Array Solar Cell Grown on Si with Ultrahigh Power-per-Weight Ratio | en_US |
dc.type | Peer reviewed | en_US |
dc.type | Journal article | en_US |
dc.description.version | publishedVersion | en_US |
dc.source.pagenumber | 2355-2366 | en_US |
dc.source.volume | 8 | en_US |
dc.source.journal | ACS Photonics | en_US |
dc.source.issue | 8 | en_US |
dc.identifier.doi | 10.1021/acsphotonics.1c00527 | |
dc.identifier.cristin | 1936238 | |
dc.relation.project | Norges forskningsråd: 295864 | en_US |
dc.relation.project | Norges forskningsråd: 197405 | en_US |
dc.relation.project | Norges forskningsråd: 239206 | en_US |
dc.relation.project | Norges forskningsråd: 228758 | en_US |
cristin.ispublished | true | |
cristin.fulltext | original | |
cristin.qualitycode | 1 | |