Defect-Enhanced Polarization Switching in the Improper Ferroelectric LuFeO3
Barrozo, Petrucio; Småbråten, Didrik Rene; Tang, Yun-Long; Prasad, Bhagwati; Saremi, Sahar; Ozgur, Rustem; Thakare, Vishal; Steinhardt, Rachel A.; Holtz, Megan, E.; Stoica, Vladimir Alexandru; Martin, Lane W.; Schlom, Darrel G.; Selbach, Sverre Magnus; Ramesh, Ramamoorthy
Peer reviewed, Journal article
Accepted version
Åpne
Permanent lenke
https://hdl.handle.net/11250/2736326Utgivelsesdato
2020Metadata
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- Institutt for materialteknologi [2562]
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Sammendrag
Results of switching behavior of the improper ferroelectric LuFeO3 are presented. Using a model set of films prepared under controlled chemical and growth‐rate conditions, it is shown that defects can reduce the quasi‐static switching voltage by up to 40% in qualitative agreement with first‐principles calculations. Switching studies show that the coercive field has a stronger frequency dispersion for the improper ferroelectrics compared to a proper ferroelectric such as PbTiO3. It is concluded that the primary structural order parameter controls the switching dynamics of such improper ferroelectrics.