dc.contributor.author | Liudi Mulyo, Andreas | |
dc.contributor.author | Rajpalke, Mohana | |
dc.contributor.author | Vullum, Per Erik | |
dc.contributor.author | Weman, Helge | |
dc.contributor.author | Kishino, Katsumi | |
dc.contributor.author | Fimland, Bjørn-Ove | |
dc.date.accessioned | 2021-02-16T15:03:25Z | |
dc.date.available | 2021-02-16T15:03:25Z | |
dc.date.created | 2020-01-26T21:59:33Z | |
dc.date.issued | 2020 | |
dc.identifier.citation | Scientific Reports. 2020, 10 (853), 1-12. | en_US |
dc.identifier.issn | 2045-2322 | |
dc.identifier.uri | https://hdl.handle.net/11250/2728499 | |
dc.description.abstract | GaN nanocolumns were synthesized on single-layer graphene via radio-frequency plasma-assisted molecular beam epitaxy, using a thin migration-enhanced epitaxy (MEE) AlN buffer layer as nucleation sites. Due to the weak nucleation on graphene, instead of an AlN thin-film we observe two distinguished AlN formations which affect the subsequent GaN nanocolumn growth: (i) AlN islands and (ii) AlN nanostructures grown along line defects (grain boundaries or wrinkles) of graphene. Structure (i) leads to the formation of vertical GaN nanocolumns regardless of the number of AlN MEE cycles, whereas (ii) can result in random orientation of the nanocolumns depending on the AlN morphology. Additionally, there is a limited amount of direct GaN nucleation on graphene, which induces non-vertical GaN nanocolumn growth. The GaN nanocolumn samples were characterized by means of scanning electron microscopy, transmission electron microscopy, high-resolution X-ray diffraction, room temperature micro-photoluminescence, and micro-Raman measurements. Surprisingly, the graphene with AlN buffer layer formed using less MEE cycles, thus resulting in lower AlN coverage, has a lower level of nitrogen plasma damage. The AlN buffer layer with lowest AlN coverage also provides the best result with respect to high-quality and vertically-aligned GaN nanocolumns. | en_US |
dc.language.iso | eng | en_US |
dc.publisher | Nature Portfolio | en_US |
dc.rights | Navngivelse 4.0 Internasjonal | * |
dc.rights.uri | http://creativecommons.org/licenses/by/4.0/deed.no | * |
dc.title | The influence of AlN buffer layer on the growth of self-assembled GaN nanocolumns on graphene | en_US |
dc.type | Peer reviewed | en_US |
dc.type | Journal article | en_US |
dc.description.version | publishedVersion | en_US |
dc.subject.nsi | VDP::Nanoteknologi: 630 | en_US |
dc.subject.nsi | VDP::Nanotechnology: 630 | en_US |
dc.source.pagenumber | 1-12 | en_US |
dc.source.volume | 10 | en_US |
dc.source.journal | Scientific Reports | en_US |
dc.source.issue | 853 | en_US |
dc.identifier.doi | 10.1038/s41598-019-55424-z | |
dc.identifier.cristin | 1782303 | |
dc.relation.project | Norges forskningsråd: 296459 | en_US |
dc.relation.project | Norges forskningsråd: 259553 | en_US |
dc.relation.project | Norges forskningsråd: 221860 | en_US |
dc.relation.project | Norges forskningsråd: 239206 | en_US |
dc.relation.project | Norges forskningsråd: 295864 | en_US |
dc.relation.project | Norges forskningsråd: 197405 | en_US |
dc.description.localcode | Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. | en_US |
cristin.ispublished | true | |
cristin.fulltext | original | |
cristin.qualitycode | 1 | |