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dc.contributor.authorQuarterman, P
dc.contributor.authorHallsteinsen, Ingrid
dc.contributor.authorDunz, Mareike
dc.contributor.authorMeinert, Markus
dc.contributor.authorArenholz, Elke
dc.contributor.authorBorchers, Julie
dc.contributor.authorGrutter, Alexander
dc.date.accessioned2020-09-03T10:01:26Z
dc.date.available2020-09-03T10:01:26Z
dc.date.created2019-09-17T13:11:01Z
dc.date.issued2019
dc.identifier.citationPHYSICAL REVIEW MATERIALS. 2019, 3 (6), 064413-1-064413-6.en_US
dc.identifier.issn2475-9953
dc.identifier.urihttps://hdl.handle.net/11250/2676178
dc.description.abstractWe report the effects of nitrogen diffusion on exchange bias in MnN/CoFeB heterostructures as a function of MnN thickness and field-annealing temperature. We find that competing effects occur in which high-temperature annealing enhances exchange bias in heterostructures with thick MnN through improved crystallinity, but in thinner samples this annealing ultimately eliminates the exchange bias due to nitrogen deficiency. Using polarized neutron reflectometry and magnetic x-ray spectroscopy, we directly observe increasing amounts of nitrogen migration from MnN into the underlying Ta seed layer with increased annealing temperature. In heterostructures with thin MnN layers, the resulting nitrogen deficiency becomes significant enough to alter the antiferromagnetic state before the Ta seed layer is nitrogen saturated. Furthermore, we observe intermixing at the MnN/CoFeB interface which is attributed to the nitrogen deficiency creating vacancies in the MnN layer after annealing in a field. This intermixing of Mn with Co and Fe is not believed to be the cause for loss of exchange bias when the MnN layer is too thin but is instead a secondary effect due to increased vacancies after nitrogen migration.en_US
dc.language.isoengen_US
dc.publisherAmerican Physical Societyen_US
dc.titleEffects of field annealing on MnN/CoFeB exchange bias systemsen_US
dc.typePeer revieweden_US
dc.typeJournal articleen_US
dc.description.versionpublishedVersionen_US
dc.source.pagenumber064413-1-064413-6en_US
dc.source.volume3en_US
dc.source.journalPHYSICAL REVIEW MATERIALSen_US
dc.source.issue6en_US
dc.identifier.doi10.1103/PhysRevMaterials.3.064413
dc.identifier.cristin1725648
dc.description.localcodeThis article will not be available due to copyright restrictions (c) 2019 by American Physical Society.en_US
cristin.unitcode194,63,35,0
cristin.unitnameInstitutt for elektroniske systemer
cristin.ispublishedtrue
cristin.fulltextoriginal
cristin.qualitycode1


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